耐高溫晶振ECS-3225MVQ-250-AS-TR專用于汽車電子中控專用晶振

日本進(jìn)口愛普生晶振VG3225EFN，是一款壓控晶體振蕩器，支持LV-PECL輸出差分晶振，小體積晶振尺寸3.2x2.5mm六腳貼片晶振，有源晶振，電源電壓3.3V，寬頻率范圍25MHz至250MHz，工作溫度-40℃至+105℃，具有超小型，輕薄型，低電源電壓，低抖動(dòng)，低功耗，低耗能，低損耗，低電平，低相位噪聲等特點(diǎn)，能夠輕易識(shí)別網(wǎng)絡(luò)信號(hào)以及精確的處理雙極信號(hào).VG3225EFN壓控晶振應(yīng)用于5G通訊設(shè)備、機(jī)頂盒、無線模塊，光端機(jī)、安防設(shè)備、路由器/交換機(jī)、儀器儀表、SATA，SAS，光纖通信，10G以太網(wǎng)及各種頻率控制設(shè)備上。

無線模塊應(yīng)用晶振VG3225EFN編碼X1G005361001600

微晶晶振,1978年成立于瑞士格倫興,為SwatchGroup的供貨商,提供手表音叉式晶體的產(chǎn)品.而今,微晶已經(jīng)發(fā)展成為一家在微型音叉式石英晶體(32kHz~250MHz),實(shí)時(shí)時(shí)鐘模塊,晶振和OCXO等多個(gè)領(lǐng)域的領(lǐng)導(dǎo)供貨商,為世界一流的終端產(chǎn)品制造商提供從設(shè)計(jì)到量產(chǎn)的全方位支持,服務(wù)范圍涵蓋手機(jī),計(jì)算機(jī),汽車電子,手表,工業(yè)控制,植入式醫(yī)療及其他高可靠性產(chǎn)品.

微晶在瑞士,泰國建有生產(chǎn)中心,及遍布世界各地的代表處.我們所有的晶振都得到ISO9001和ISO14001的認(rèn)證,并達(dá)到RoHS,REACh等規(guī)范的要求.全球約550個(gè)員工的責(zé)任感和奉獻(xiàn)精神是我們成功的基石.我們對(duì)管理,環(huán)境,社會(huì)責(zé)任都有明確的行為準(zhǔn)則(比如對(duì)有爭(zhēng)議的原材料的問題上),這些是我們?cè)谖磥肀３指?jìng)爭(zhēng)優(yōu)勢(shì)的主要原因.

微晶的管理團(tuán)隊(duì)以及領(lǐng)導(dǎo)的工作人員.職位提供了一個(gè)積極的例子,在所有領(lǐng)域的質(zhì)量行為.公司.他們激勵(lì)員工始終如一地思考問題.質(zhì)量與成本.必須迅速分析,糾正目前存在的問題,和適當(dāng)?shù)拇胧?/span>.所有的經(jīng)理負(fù)責(zé)娛樂一個(gè)內(nèi)部環(huán)境,在那里可以公開指出問題并進(jìn)行討論.通過不斷改進(jìn)技術(shù),過程,產(chǎn)品,服務(wù),質(zhì)量,環(huán)境保護(hù),安全和安全方面,微晶也將保持其在未來的市場(chǎng)地位.

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7XZ-32.768KDA-T臺(tái)灣晶技晶振7Q-16.368MBG-T臺(tái)灣晶技晶振7XZ-32.768KDE-T晶振7Q-16.369MBG-T晶振7W-8.000MBB-T進(jìn)口晶振7Q-16.369MBG-T進(jìn)口晶振7W-50.000MBB-T石英晶體振蕩器7L-40.000MCS-T石英晶體振蕩器7W-50.000MBA-T可編程晶振7L-40.000MCS-T可編程晶振AU-26.000MBE-T有源晶振7Q-16.3676MBG-T有源晶振7C-40.000MBA-T臺(tái)灣TXC晶振7Q-16.3676MBG-T臺(tái)灣TXC晶振7Z-38.400MBG-T晶體振蕩器8W-12.000MBB-T晶體振蕩器6U-16.384MBE-T臺(tái)產(chǎn)晶振8W-12.000MBB-T臺(tái)產(chǎn)晶振BF-125.000MBE-T石英晶振AU-24.000MBE-T石英晶振BF-100.000MBE-T壓電石英振蕩子7Z-26.000MDS-T壓電石英振蕩子BX-100.000MBE-T貼片晶振8W-26.000MBB-T貼片晶振CX-100.000MBE-T溫補(bǔ)晶振8W-40.000MBB-T溫補(bǔ)晶振7XZ-32.768KBA-T壓控振蕩器8W-40.000MBB-T壓控振蕩器7W-25.000MBB-T有源晶體振蕩器7L-26.000MCG-T有源晶體振蕩器7W-48.000MBB-T臺(tái)灣晶技晶振7L-26.000MCG-T臺(tái)灣晶技晶振7X-19.200MBB-T晶振BB-106.250MBE-T晶振7X-30.000MBB-T進(jìn)口晶振BB-106.250MBE-T進(jìn)口晶振AW-11.2896MBE-T石英晶體振蕩器7Z-26.000MBG-T石英晶體振蕩器AU-50.000MBE-T可編程晶振7Z-38.400MDG-T可編程晶振7X-38.400MBA-T有源晶振7Z-26.000MDG-T有源晶振8W-12.000MBA-T臺(tái)灣TXC晶振8W-19.200MBA-T臺(tái)灣TXC晶振BB-125.000MBE-T晶體振蕩器8W-19.200MBA-T晶體振蕩器7W-4.096MBB-T臺(tái)產(chǎn)晶振8W-40.000MBA-T臺(tái)產(chǎn)晶振7W-40.000MBB-T石英晶振8W-40.000MBA-T石英晶振7C-26.000MBB-T壓電石英振蕩子7W-125.000MBB-T壓電石英振蕩子7C-40.000MCB-T貼片晶振7W-125.000MBB-T貼片晶振7W-66.6666MBB-T溫補(bǔ)晶振8W-24.576MBA-T溫補(bǔ)晶振7W-24.576MBA-T壓控振蕩器8W-24.576MBA-T壓控振蕩器7X-19.200MBA-T有源晶體振蕩器7W-133.330MBB-T有源晶體振蕩器BB-161.1328MBE-T臺(tái)灣晶技晶振7W-133.330MBB-T臺(tái)灣晶技晶振7X-20.000MBE-T晶振BT-156.250MBC-T晶振7X-20.000MBB-T進(jìn)口晶振BT-156.250MBC-T進(jìn)口晶振AU-33.000MBE-T石英晶體振蕩器BB-100.000MBE-T石英晶體振蕩器7WA2572007可編程晶振BB-100.000MBE-T可編程晶振6U-32.768MBE-T有源晶振BS-106.250MBC-T有源晶振BF-62.500MBE-T臺(tái)灣TXC晶振BS-106.250MBC-T臺(tái)灣TXC晶振BB-150.000MBE-T晶體振蕩器BB-133.330MBE-T晶體振蕩器BR-61.4400MBE-T臺(tái)產(chǎn)晶振BB-133.330MBE-T臺(tái)產(chǎn)晶振7N-12.800MBP-T石英晶振CB-150.000MBE-T石英晶振7N-26.000MBP-T壓電石英振蕩子CB-150.000MBE-T壓電石英振蕩子TC-3.6864MBD-T貼片晶振BF-156.250MBE-T貼片晶振TC-3.6864MBD-T溫補(bǔ)晶振BB-156.250MBE-T溫補(bǔ)晶振TC-70.000MBD-T壓控振蕩器CS-156.250MCC-T壓控振蕩器TC-70.000MBD-T有源晶體振蕩器CS-156.250MCC-T有源晶體振蕩器TD-19.200MBD-T臺(tái)灣晶技晶振BS-250.000MBC-T臺(tái)灣晶技晶振TD-19.200MBD-T晶振BS-250.000MBC-T晶振TD-3.6864MBD-T進(jìn)口晶振CT-156.250MCC-T進(jìn)口晶振TD-3.6864MBD-T石英晶體振蕩器CT-156.250MCC-T石英晶體振蕩器TD-64.000MBD-T可編程晶振BB-166.000MBE-T可編程晶振TD-64.000MBD-T有源晶振BB-166.000MBE-T有源晶振TD-7.3728MBD-T臺(tái)灣TXC晶振BS-312.500MBC-T臺(tái)灣TXC晶振TD-7.3728MBD-T晶體振蕩器BS-312.500MBC-T晶體振蕩器7W-32.000MBB-T臺(tái)產(chǎn)晶振BT-312.500MBC-T臺(tái)產(chǎn)晶振7W-32.000MBB-T石英晶振BT-312.500MBC-T石英晶振7X-19.200MBE-T壓電石英振蕩子CS-212.500MCC-T壓電石英振蕩子8W-26.000MBE-T貼片晶振CS-212.500MCC-T貼片晶振7X-30.000MBE-T溫補(bǔ)晶振BJ-61.440MBE-T溫補(bǔ)晶振7X-25.000MBE-T壓控振蕩器BJ-61.440MBE-T壓控振蕩器7X-38.400MBE-T有源晶體振蕩器CS-312.500MCC-T有源晶體振蕩器7X-48.000MBE-T臺(tái)灣晶技晶振CS-312.500MCC-T臺(tái)灣晶技晶振8W-20.000MBE-T晶振CT-312.500MCC-T晶振8W-13.000MBE-T進(jìn)口晶振CT-312.500MCC-T進(jìn)口晶振7X-50.000MBE-T石英晶體振蕩器7P-26.000MBP-T石英晶體振蕩器8W-24.000MBE-T可編程晶振7P-19.200MBP-T可編程晶振7X-26.000MBE-T有源晶振7P-25.000MBP-T有源晶振TD-4.096MBD-T臺(tái)灣TXC晶振7N-20.000MBP-T臺(tái)灣TXC晶振TD-4.096MBD-T晶體振蕩器7N-10.000MBP-T晶體振蕩器TC-33.000MBD-T臺(tái)產(chǎn)晶振7N-19.200MBP-T臺(tái)產(chǎn)晶振TC-33.000MBD-T石英晶振7N-25.000MBP-T石英晶振TD-40.000MBD-T壓電石英振蕩子BR-77.760MBE-T壓電石英振蕩子TD-40.000MBD-T貼片晶振BR-77.760MBE-T貼片晶振TD-49.152MBD-T溫補(bǔ)晶振BR-122.880MBE-T溫補(bǔ)晶振TD-49.152MBD-T壓控振蕩器BR-122.880MBE-T壓控振蕩器TC-4.000MBD-T有源晶體振蕩器BJ-122.880MBE-T有源晶體振蕩器TC-4.000MBD-T臺(tái)灣晶技晶振BJ-122.880MBE-T臺(tái)灣晶技晶振TC-16.0972MBD-T晶振CR-122.880MBE-T晶振TC-16.0972MBD-T進(jìn)口晶振CR-122.880MBE-T進(jìn)口晶振TD-24.576MBD-T石英晶體振蕩器BR-153.600MBE-T石英晶體振蕩器TD-24.576MBD-T可編程晶振CJ-153.600MBE-T可編程晶振TC-24.576MBD-T有源晶振CJ-153.600MBE-T有源晶振TC-24.576MBD-T臺(tái)灣TXC晶振BJ-156.250MBE-T臺(tái)灣TXC晶振TD-12.000MBD-T晶體振蕩器BJ-156.250MBE-T晶體振蕩器TD-12.000MBD-T臺(tái)產(chǎn)晶振7W-1.8432MBE-T臺(tái)產(chǎn)晶振TC-20.000MBD-T石英晶振7W-14.31818MBE-T石英晶振TC-20.000MBD-T壓電石英振蕩子7W-12.288MBB-T壓電石英振蕩子TC-12.000MBD-T貼片晶振7W-12.288MBB-T貼片晶振TC-12.000MBD-T溫補(bǔ)晶振7W-40.000MBE-T溫補(bǔ)晶振TC-36.000MBD-T壓控振蕩器7W-40.000MBE-T壓控振蕩器TC-36.000MBD-T有源晶體振蕩器TA-20.000MBD-T有源晶體振蕩器TC-16.000MBD-T臺(tái)灣晶技晶振TA-20.000MBD-T臺(tái)灣晶技晶振TC-16.000MBD-T晶振TA-22.5792MBD-T晶振TC-22.5792MBD-T進(jìn)口晶振TA-22.5792MBD-T進(jìn)口晶振TC-22.5792MBD-T石英晶體振蕩器TA-50.000MBD-T石英晶體振蕩器TD-24.000MBD-T可編程晶振TA-50.000MBD-T可編程晶振TD-24.000MBD-T有源晶振7W-14.7456MBB-T有源晶振TD-1.8432MBD-T臺(tái)灣TXC晶振7W-14.7456MBB-T臺(tái)灣TXC晶振TD-1.8432MBD-T晶體振蕩器7W-24.576MBB-T晶體振蕩器TC-64.000MBD-T臺(tái)產(chǎn)晶振7W-24.576MBB-T臺(tái)產(chǎn)晶振TC-64.000MBD-T石英晶振7W-8.192MBE-T石英晶振TC-25.000MBD-T壓電石英振蕩子7W-32.768MBE-T壓電石英振蕩子TC-25.000MBD-T貼片晶振7W-36.000MBE-T貼片晶振TC-1.8432MBD-T溫補(bǔ)晶振7C-27.000MBE-T溫補(bǔ)晶振TC-1.8432MBD-T壓控振蕩器7C-48.000MBE-T壓控振蕩器TD-22.5792MBD-T有源晶體振蕩器7W-1.544MBE-T有源晶體振蕩器TD-22.5792MBD-T臺(tái)灣晶技晶振7W-4.096MBE-T臺(tái)灣晶技晶振7C-50.000MBE-T晶振7C-40.000MBE-T晶振7WZ-32.768KBD-T進(jìn)口晶振7W-8.000MBE-T進(jìn)口晶振7WZ-32.768KBD-T石英晶體振蕩器7C-25.000MBE-T石英晶體振蕩器7XZ-32.768KBE-T可編程晶振7W-6.000MBE-T可編程晶振7W-8.192MBB-T有源晶振7W-10.000MBE-T有源晶振7W-4.000MBB-T臺(tái)灣TXC晶振7W-50.000MBE-T臺(tái)灣TXC晶振7W-4.000MBB-T晶體振蕩器7W-24.000MBE-T晶體振蕩器7L-16.368MCG-T臺(tái)產(chǎn)晶振7W-33.333MBE-T臺(tái)產(chǎn)晶振7L-16.368MCG-T石英晶振7W-24.576MBE-T石英晶振TC-125.000MBD-T壓電石英振蕩子7W-25.000MBE-T壓電石英振蕩子TC-125.000MBD-T貼片晶振7W-10.000MAB-T貼片晶振7C-25.000MCB-T溫補(bǔ)晶振7W-48.000MBE-T溫補(bǔ)晶振7Q-40.000MBS-T壓控振蕩器7W-40.000MAB-T壓控振蕩器7W-4.096MBA-T有源晶體振蕩器7W-40.000MAB-T有源晶體振蕩器7W-12.288MBA-T臺(tái)灣晶技晶振7W-20.000MAB-T臺(tái)灣晶技晶振7W-10.000MBA-T晶振7W-20.000MAB-T晶振AC-4.000MAE-T進(jìn)口晶振7W-14.31818MAB-T進(jìn)口晶振7X-24.576MBB-T石英晶體振蕩器7W-14.31818MAB-T石英晶體振蕩器7X-12.000MBB-T可編程晶振7W-24.000MAB-T可編程晶振7X-12.000MBB-T有源晶振7W-24.000MAB-T有源晶振7X-50.000MBB-T臺(tái)灣TXC晶振TB-1.8432MBD-T臺(tái)灣TXC晶振7X-25.000MBB-T晶體振蕩器TB-1.8432MBD-T晶體振蕩器7X-25.000MBB-T臺(tái)產(chǎn)晶振TB-70.000MBD-T臺(tái)產(chǎn)晶振7C-26.000MBA-T石英晶振TB-70.000MBD-T石英晶振7X-48.000MBB-T壓電石英振蕩子TB-30.000MBD-T壓電石英振蕩子7X-26.000MBB-T貼片晶振TB-30.000MBD-T貼片晶振7C-24.576MBA-T溫補(bǔ)晶振TA-11.0592MBD-T溫補(bǔ)晶振AU-14.31818MBE-T壓控振蕩器TA-11.0592MBD-T壓控振蕩器AU-48.000MBE-T有源晶體振蕩器TC-50.000MBD-T有源晶體振蕩器AU-48.000MBE-T臺(tái)灣晶技晶振TC-50.000MBD-T臺(tái)灣晶技晶振AU-12.000MBE-T晶振TA-13.000MBD-T晶振AU-12.000MBE-T進(jìn)口晶振TA-13.000MBD-T進(jìn)口晶振AU-12.288MBE-T石英晶體振蕩器TA-12.288MBD-T石英晶體振蕩器AU-25.000MBE-T可編程晶振TA-12.288MBD-T可編程晶振AU-27.000MBE-T有源晶振TA-33.000MBD-T有源晶振7X-30.000MBA-T臺(tái)灣TXC晶振TA-33.000MBD-T臺(tái)灣TXC晶振7X-30.000MBA-T晶體振蕩器TC-24.000MBD-T晶體振蕩器7X-12.000MBA-T臺(tái)產(chǎn)晶振TC-24.000MBD-T臺(tái)產(chǎn)晶振7X-12.000MBA-T石英晶振TB-22.1184MBD-T石英晶振7X-26.000MBA-T壓電石英振蕩子TB-22.1184MBD-T壓電石英振蕩子7X-25.000MBA-T貼片晶振TA-6.000MBD-T貼片晶振7X-48.000MBA-T溫補(bǔ)晶振TA-6.000MBD-T溫補(bǔ)晶振7X-48.000MBA-T壓控振蕩器TD-33.33333MBD-T壓控振蕩器7L-19.200MCS-T有源晶體振蕩器TD-33.33333MBD-T有源晶體振蕩器.

ECX-P33BN-75.000伊西斯晶振ECX-L27CM-12.800石英晶體振蕩器ECX-P33BN-77.760歐美晶振ECX-L27CM-120.000有源晶振ECX-P33BN-80.000石英晶體振蕩器ECX-L27CM-125.000進(jìn)口晶體振蕩器ECX-P33CM-10.000有源晶振ECX-L27CM-133.333石英晶振ECX-P33CM-100.000進(jìn)口晶體振蕩器ECX-L27CM-14.7456美國進(jìn)口晶振ECX-P33CM-106.250石英晶振ECX-L27CM-148.3516貼片晶振ECX-P33CM-11.0592美國進(jìn)口晶振ECX-L27CM-148.500壓電石英振蕩子ECX-P33CM-12.000貼片晶振ECX-L27CM-150.000美國晶振ECX-P33CM-12.288壓電石英振蕩子ECX-L27CM-155.520有源貼片晶振ECX-P33CM-12.500美國晶振ECX-L27CM-156.250晶振ECX-P33CM-12.800有源貼片晶振ECX-L27CM-16.000晶體振蕩器ECX-P33CM-120.000晶振ECX-L27CM-16.384進(jìn)口ECS晶振ECX-P33CM-125.000晶體振蕩器ECX-L27CM-18.432伊西斯晶振ECX-P33CM-133.333進(jìn)口ECS晶振ECX-L27CM-20.000歐美晶振ECX-P33CM-14.7456伊西斯晶振ECX-L27CM-200.000石英晶體振蕩器ECX-P33CM-148.3516歐美晶振ECX-L27CM-212.500有源晶振ECX-P33CM-148.500石英晶體振蕩器ECX-L27CM-24.000進(jìn)口晶體振蕩器ECX-P33CM-150.000有源晶振ECX-L27CM-24.576石英晶振ECX-P33CM-155.520進(jìn)口晶體振蕩器ECX-L27CM-25.000美國進(jìn)口晶振ECX-P33CM-156.250石英晶振ECX-L27CM-250.000貼片晶振ECX-P33CM-16.000美國進(jìn)口晶振ECX-L27CM-27.000壓電石英振蕩子ECX-P33CM-16.384貼片晶振ECX-L27CM-30.000美國晶振ECX-P33CM-18.432壓電石英振蕩子ECX-L27CM-32.000有源貼片晶振ECX-P33CM-20.000美國晶振ECX-L27CM-32.768晶振ECX-P33CM-200.000有源貼片晶振ECX-L27CM-33.000晶體振蕩器ECX-P33CM-212.500晶振ECX-L27CM-33.333進(jìn)口ECS晶振ECX-P33CM-24.000晶體振蕩器ECX-L27CM-40.000伊西斯晶振ECX-P33CM-24.576進(jìn)口ECS晶振ECX-L27CM-48.000歐美晶振ECX-P33CM-25.000伊西斯晶振ECX-L27CM-50.000石英晶體振蕩器ECX-P33CM-250.000歐美晶振ECX-L27CM-500.000有源晶振ECX-P33CM-27.000石英晶體振蕩器ECX-L27CM-60.000進(jìn)口晶體振蕩器ECX-P33CM-30.000有源晶振ECX-L27CM-62.500石英晶振ECX-P33CM-32.000進(jìn)口晶體振蕩器ECX-L27CM-66.666美國進(jìn)口晶振ECX-P33CM-32.768石英晶振ECX-L27CM-74.250貼片晶振ECX-P33CM-33.000美國進(jìn)口晶振ECX-L27CM-75.000壓電石英振蕩子ECX-P33CM-33.333貼片晶振ECX-L27CM-77.760美國晶振ECX-P33CM-40.000壓電石英振蕩子ECX-L27CM-80.000有源貼片晶振ECX-P33CM-48.000美國晶振ECX-L37BL-120.237晶振ECX-P33CM-50.000有源貼片晶振ECX-L37BN-10.000晶體振蕩器ECX-P33CM-60.000晶振ECX-L37BN-106.250進(jìn)口ECS晶振ECX-P33CM-62.500晶體振蕩器ECX-L37BN-11.0592伊西斯晶振ECX-P33CM-66.666進(jìn)口ECS晶振ECX-L37BN-12.000歐美晶振ECX-P33CM-74.250伊西斯晶振ECX-L37BN-12.288石英晶體振蕩器ECX-P33CM-75.000歐美晶振ECX-L37BN-12.500有源晶振ECX-P33CM-77.760石英晶體振蕩器ECX-L37BN-12.800進(jìn)口晶體振蕩器ECX-P33CM-80.000有源晶振ECX-L37BN-120.000石英晶振ECX-L27BL-125.000進(jìn)口晶體振蕩器ECX-L37BN-133.333美國進(jìn)口晶振ECX-L27BL-200.00石英晶振ECX-L37BN-14.31818貼片晶振ECX-L27BN-10.000美國進(jìn)口晶振ECX-L37BN-14.7456壓電石英振蕩子ECX-L27BN-100.000貼片晶振ECX-L37BN-148.3516美國晶振ECX-L27BN-106.250壓電石英振蕩子ECX-L37BN-148.500有源貼片晶振ECX-L27BN-11.0592美國晶振ECX-L37BN-150.000晶振ECX-L27BN-12.000有源貼片晶振ECX-L37BN-155.520晶體振蕩器ECX-L27BN-12.288晶振ECX-L37BN-156.250進(jìn)口ECS晶振ECX-L27BN-12.500晶體振蕩器ECX-L37BN-16.000伊西斯晶振ECX-L27BN-12.800進(jìn)口ECS晶振ECX-L37BN-16.384歐美晶振ECX-L27BN-120.000伊西斯晶振ECX-L37BN-18.432石英晶體振蕩器ECX-L27BN-125.000歐美晶振ECX-L37BN-20.000有源晶振ECX-L27BN-133.333石英晶體振蕩器ECX-L37BN-24.000進(jìn)口晶體振蕩器ECX-L27BN-14.7456有源晶振ECX-L37BN-24.576石英晶振ECX-L27BN-148.3516進(jìn)口晶體振蕩器ECX-L37BN-25.000美國進(jìn)口晶振ECX-L27BN-148.500石英晶振ECX-L37BN-250.000貼片晶振ECX-L27BN-150.000美國進(jìn)口晶振ECX-L37BN-27.000壓電石英振蕩子ECX-L27BN-155.520貼片晶振ECX-L37BN-30.000美國晶振ECX-L27BN-156.250壓電石英振蕩子ECX-L37BN-32.000有源貼片晶振ECX-L27BN-16.000美國晶振ECX-L37BN-32.768晶振ECX-L27BN-16.384有源貼片晶振ECX-L37BN-33.000晶體振蕩器ECX-L27BN-18.432晶振ECX-L37BN-33.333進(jìn)口ECS晶振ECX-L27BN-187.500晶體振蕩器ECX-L37BN-40.000伊西斯晶振ECX-L27BN-20.000進(jìn)口ECS晶振ECX-L37BN-48.000歐美晶振ECX-L27BN-200.000伊西斯晶振ECX-L37BN-50.000石英晶體振蕩器ECX-L27BN-212.500歐美晶振ECX-L37BN-60.000有源晶振ECX-L27BN-24.000石英晶體振蕩器ECX-L37BN-62.500進(jìn)口晶體振蕩器ECX-L27BN-24.576有源晶振ECX-L37BN-66.666石英晶振ECX-L27BN-25.000進(jìn)口晶體振蕩器ECX-L37BN-74.250美國進(jìn)口晶振ECX-L27BN-250.000石英晶振ECX-L37BN-77.760貼片晶振ECX-L27BN-27.000美國進(jìn)口晶振ECX-L37BN-80.000壓電石英振蕩子ECX-L27BN-30.000貼片晶振ECX-L37CM-10.000美國晶振ECX-L27BN-32.000壓電石英振蕩子ECX-L37CM-100.000有源貼片晶振ECX-L27BN-32.768美國晶振ECX-L37CM-106.250晶振ECX-L27BN-33.000有源貼片晶振ECX-L37CM-11.0592晶體振蕩器ECX-L27BN-33.333晶振ECX-L37CM-12.000進(jìn)口ECS晶振ECX-L27BN-40.000晶體振蕩器ECX-L37CM-12.288伊西斯晶振ECX-L27BN-48.000進(jìn)口ECS晶振ECX-L37CM-12.500歐美晶振ECX-L27BN-50.000伊西斯晶振ECX-L37CM-12.800石英晶體振蕩器ECX-L27BN-60.000歐美晶振ECX-L37CM-120.000有源晶振ECX-L27BN-62.500石英晶體振蕩器ECX-L37CM-125.000進(jìn)口晶體振蕩器ECX-L27BN-66.666有源晶振ECX-L37CM-133.333石英晶振ECX-L27BN-74.250進(jìn)口晶體振蕩器ECX-L37CM-14.7456美國進(jìn)口晶振ECX-L27BN-75.000石英晶振ECX-L37CM-148.3516貼片晶振ECX-L27BN-77.760美國進(jìn)口晶振ECX-L37CM-148.500壓電石英振蕩子ECX-L27BN-80.000貼片晶振ECX-L37CM-150.000美國晶振ECX-L27CL-100.000壓電石英振蕩子ECX-L37CM-156.250有源貼片晶振ECX-L27CM-10.000美國晶振ECX-L37CM-16.000晶振ECX-L27CM-100.000有源貼片晶振ECX-L37CM-16.384晶體振蕩器ECX-L27CM-106.250晶振ECX-L37CM-18.432進(jìn)口ECS晶振ECX-L27CM-11.0592晶體振蕩器ECX-L37CM-20.000伊西斯晶振ECX-L27CM-12.000進(jìn)口ECS晶振ECX-L37CM-200.000歐美晶振ECX-L27CM-12.288伊西斯晶振ECX-L37CM-212.500石英晶體振蕩器ECX-L27CM-12.500歐美晶振ECX-L37CM-24.000有源晶振.